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Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots

(6) Hsu, Wei Ting a Liao, Yu An a,b Hsu, Feng Chang a Chiu, Pei Chin b Chyi, Jen Inn b Chang, Wen Hao a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; EMISSION ENERGIES; HOLE STATE; INAS; INAS QUANTUM DOTS; LONG WAVELENGTH; RECOMBINATION LIFETIME; THEORETICAL CALCULATIONS;

DISTRIBUTION FUNCTIONS; INDIUM ARSENIDE; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING GALLIUM;

EID: 80052082750 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3624464 Document Type: Article

Times cited : (33)

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