Tuning nickel silicide properties using a lamp based RTA, a heat conduction based RTA or a furnace anneal

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2282-2286

  Waidmann, S ^a   Kahlert, V ^a   Streck, C ^a   Press, P ^a   Kammler, T ^a   Dittmar, K ^a   Zienert, I ^a   Rinderknecht, J ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Nickel silicide; NiSi; RTA

Indexed keywords

ANNEALING; ELECTRIC LAMPS; ELECTRIC RESISTANCE MEASUREMENT; FURNACES; HEAT CONDUCTION; SILICON WAFERS;

NICKEL SILICIDE; NISI; SHEET RESISTANCE MEASUREMENTS; THERMAL BUDGET;

NICKEL COMPOUNDS;

EID: 33751231450     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.10.020     Document Type: Article

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