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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1625-1630

Growth and structural properties of ZnO films on (10-10) m-plane sapphire substrates by plasma-assisted molecular beam epitaxy

(9) Kim, Jung Hyun a Han, Seok Kyu a Hong, Sun Ig a Hong, Soon Ku a Lee, Jae Wook b Lee, Jeong Yong b Song, Jung Hoon c Park, Jin Sub d Yao, Takafumi d

a Chungnam National University (South Korea)

b Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

c Kongju National University (South Korea)

d TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PLASMA DIAGNOSTICS; SAPPHIRE; STRUCTURAL PROPERTIES; SURFACE MORPHOLOGY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATOMIC FORCE MICROSCOPE IMAGES; FULL WIDTHS AT HALF MAXIMUMS; INHOMOGENEITIES; M-PLANE; OFF-AXIS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TOP SURFACE; X RAY ROCKING CURVE; ZNO; ZNO FILMS;

ZINC OXIDE;

EID: 77956201141 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3119682 Document Type: Conference Paper

Times cited : (22)

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