Soft and hard failures of ingan-based LEDs submitted to electrostatic discharge testing

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 579-581

  Meneghini, Matteo ^a   Tazzoli, Augusto ^a   Butendeich, Rainer ^b   Hahn, Berthold ^b   Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

Degradation; Electrostatic discharge (ESD); Gallium nitride; Light emitting diode (LED)

Indexed keywords

CURRENT CONDUCTION; DEGRADATION MECHANISM; DIELECTRIC RUPTURE; ELECTROSTATIC DISCHARGE (ESD); HIGH CURRENT DENSITIES; HIGH VOLTAGE LEVEL; INGAN-BASED LED; LIGHT-EMITTING DIODE (LED); REVERSE-BIAS; SHORT CIRCUIT;

DEGRADATION; DIODES; ELECTROSTATIC DISCHARGE; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; QUALITY ASSURANCE; RELIABILITY ANALYSIS;

ELECTROSTATIC DEVICES;

EID: 77953025824     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045874     Document Type: Article

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