Improvement in the light output power of GaN-based light-emitting diodes by natural-cluster silicon dioxide nanoparticles as the current-blocking layer

IEEE Photonics Technology Letters

Volumn 21, Issue 14, 2009, Pages 996-998

  Tsai, Chun Fu ^a   Su, Yan Kuin ^a,b   Lin, Chun Liang ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Current blocking layer (CBL); GaN based light emitting diodes (LEDs); Silicon dioxide (SiO2) nanoparticles

Indexed keywords

ACTIVE LAYER; BLOCKING LAYERS; CURRENT-BLOCKING LAYER (CBL); FORWARD VOLTAGE; GAN-BASED LIGHT-EMITTING DIODES; GAN-BASED LIGHT-EMITTING DIODES (LEDS); INJECTED CURRENT; LIGHT OUTPUT POWER; MULTIPLE QUANTUM WELLS; OPTICAL ABSORPTION; SILICON DIOXIDE; SILICON DIOXIDE (SIO2) NANOPARTICLES; SILICON DIOXIDE NANOPARTICLES;

CURRENT DENSITY; DIODES; ELECTRIC POTENTIAL; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; NANOPARTICLES; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; VANADIUM;

LIGHT EMITTING DIODES;

EID: 67650666729     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2020177     Document Type: Article

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