Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs

Superlattices and Microstructures

Volumn 48, Issue 1, 2010, Pages 23-30

  Tsai, P C ^a   Chen, W R ^b   Su, Y K ^a,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

Electrostatic discharge (ESD); GaN; Human body model (HBM); LED; MOS

Indexed keywords

CAPACITOR DESIGN; ELECTROSTATIC DISCHARGE PROTECTION; GAN; GAN BASED LED; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; HUMAN BODY MODEL (HBM); HUMAN-BODY MODE; LED; METAL ELECTRODES; METAL LINE; METAL OXIDE SEMICONDUCTOR; MOS; P-TYPE; TOP SURFACE;

CAPACITORS; ELECTROSTATIC DISCHARGE; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; MOS CAPACITORS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 77955658823     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.04.006     Document Type: Article

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