X-ray photoelectron spectroscopy and structural analysis of amorphous SiO xN y films deposited at low temperatures

Journal of Applied Physics

Volumn 98, Issue 9, 2005, Pages

  Cova, P ^a   Poulin, S ^b   Masut, R A ^b  

^a UNIVERSIDAD DE ORIENTE   (Venezuela)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING RATE; FILM DEPOSITION; INTRINSIC DEFECTS; OXIDATION STATES;

DATA ACQUISITION; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; LOW TEMPERATURE EFFECTS; STRUCTURAL ANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 27844612592     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2113415     Document Type: Article

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