Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals

Journal of Materials Science

Volumn 46, Issue 19, 2011, Pages 6390-6395

  Gentils, Aurélie ^a,b,c   Linez, Florence ^a,b   Canizarès, Aurélien ^a,b   Simon, Patrick ^a,b   Thomé, Lionel ^c   Barthe, Marie France ^a,b  

^a CNRS   (France)

^b UNIVERSITÉ D'ORLÉANS   (France)

^c CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATED DAMAGE; FLUENCES; IMPLANTATION-INDUCED DAMAGE; ION ENERGIES; NUCLEAR COLLISIONS; RAMAN DATA; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING SPECTROMETRY;

DIFFRACTIVE OPTICS; ION IMPLANTATION; IONS; POINT DEFECTS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE;

SINGLE CRYSTALS;

EID: 80051549769     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-011-5587-4     Document Type: Conference Paper

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