Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions

Energy Procedia

Volumn 3, Issue , 2011, Pages 51-57

  Cannella, G ^a   Principato, F ^a   Foti, M ^b   Garozzo, C ^c   Lombardo, S ^c  

^a UNIVERSITY OF PALERMO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CNR IMM   (Italy)

Author keywords

Amorphous silicon; Capacitance; Heterojunction; TCO

Indexed keywords

AMORPHOUS SILICON; F REGION; HETEROJUNCTIONS; SEMICONDUCTOR DOPING; SILICON;

BUILT-IN POTENTIAL; CAPACITANCE VOLTAGE MEASUREMENTS; CIRCULAR GEOMETRY; DEPLETION WIDTHS; ELECTRICAL CONTACTS; JUNCTION PARAMETERS; TRANSMISSION LINE MODELING; TRANSPORT MECHANISM;

CAPACITANCE;

EID: 79952770731     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.01.009     Document Type: Conference Paper

References (10)

1. F. Sanchez Sinencio and R. Williams, "Barrier at the interface between amorphous silicon and transparent oxides and its influences on solar cell performance", J. Appl. Phys, 54 (5), May 1983, 2757.
2. 2 and highly doped p-type amorphous SiC by using the pulsed laser-induced transient photopotential technique", Appl. Phys. Letter, 51 (1987) 1685.
3. F. Smole, M. Topic and J. Furlan ,"Analysis of the TCO/p(a-Si:C:H) heterojunction and its influence on p-i-n a-Si:H solar cell performance", J. of Non-Crystalline Solids,194 (1996), 312-318. (Pubitemid 126337937)
4. 2/p-a-Si:H interface", J. of Non Crystalline solids 262 (2000) 99-105. (Pubitemid 30553130)
5. F. Principato, G. Cannella, M. Foti and S. Lombardo, "Impact of transparent conductive oxide on the admittance of thin film solar cells" Solid State Electronics, 54, (2010), 1284.
6. H. Kromer, "Heterostructures devices: a device physicist looks at interface", SurfaceScience 132, (1983), 543.
7. H.K. Gummel and D.L. Scharfetter, "Depletion layer capacitance of p+n step junctions" J. Appl. Phys. 38, (1967), 2148.
8. S.M. Sze, "Physics of semiconductor devices", 2nd edition, Wiley Interscience, 1981.
9. J. Singh and U.K. Mishra, "Semiconductor devices and physics" Springer.
10. M. Vukadinović, F. Smole, M. Topič, R.E.I. Schropp and F.A. Rubinelli "Transport in tunneling recombination junctions: a combined computer simulation study", J. of Appl. Phys. 96, iss.12, (2004), 7289.