A comparison of fill factor and recombination losses in amorphous silicon solar cells on ZnO and SnO2

Renewable Energy

Volumn 34, Issue 6, 2009, Pages 1595-1599

  Alkaya, A ^a   Kaplan, R ^a   Canbolat, H ^a   Hegedus, S S ^b  

^a MERSIN UNIVERSITY   (Turkey)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

Fill factor; Intensity and frequency dependence of photocurrent; Quantum efficiency; Recombination; ZnO and SnO2 a Si:H p i n solar cell

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SILICON; BIAS VOLTAGE; CONDUCTIVE MATERIALS; MODULATION; PHOTOCURRENTS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SUBSTRATES; ZINC OXIDE;

AMORPHOUS SILICON SOLAR CELLS; FILL FACTOR; FLUX DENSITIES; HYDROGENATED AMORPHOUS SILICONS; I LAYERS; I-V CHARACTERISTICS; ILLUMINATION LEVELS; INCIDENT LIGHTS; INTENSITY- AND FREQUENCY-DEPENDENCE OF PHOTOCURRENT; MODULATION FREQUENCIES; OPEN-CIRCUIT VOLTAGES; P-I-N CELLS; PHOTOCURRENT MEASUREMENTS; POWER-LAW RELATIONSHIPS; QUANTUM EFFICIENCY SPECTRUM; RECOMBINATION; RECOMBINATION KINETICS; RECOMBINATION LOSS; SOLAR CELL PERFORMANCE; SUBSTRATE MATERIALS; WINDOW LAYERS; ZNO AND SNO2/A-SI:H P-I-N SOLAR CELL; ZNO SUBSTRATES;

QUANTUM EFFICIENCY;

COMPARATIVE STUDY; EXPERIMENTAL STUDY; POWER LAW; SOLAR POWER; SUBSTRATE; TIN; ZINC;

EID: 59049085488     PISSN: 09601481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.renene.2008.11.009     Document Type: Article

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