Tunnelling generation-recombination currents in a-Si junctions

Progress in Quantum Electronics

Volumn 25, Issue 2, 2001, Pages 55-96

  Furlan, Jože ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; QUANTUM THEORY; SEMICONDUCTING SILICON; THERMAL EFFECTS;

TUNNELLING GENERATION-RECOMBINATION CURRENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0035276198     PISSN: 00796727     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0079-6727(01)00003-9     Document Type: Review

References (48)

1. Spear W.E., LeComber P.G., Snell A.J. Philosophical Magazine B. 38:1978;303-317.
2. Harris A.J., Walker R.S., Sneddon R. Journal of Applied Physics. 51:1980;4287-4290.
3. Hegedus S.S., Kampas F., Xi J. Applied Physical Letters. 67:1995;813-815.
4. Hou J., Xi J., Kampas F., Bae S., Fonash S.J. Materials Research Society Symposium Proceedings. 336:1994;717-722.
5. J.Y. Hou, J.K. Arch, S.J. Fonash, S. Wiedeman, M. Bennett, Conference Record of the 22nd IEEE Photovoltaic Specialists Conference, Las Vegas, 1991, pp. 1260-1264.
6. J.A. Willemen, M. Zeman, J.W. Metselaar, Proceedings of the first WCPEC, Hawaii, 1994, pp. 599-602.
7. Hurkx G.A.M., Klaassen D.B.M., Knuvers M.P.G. IEEE Transactions on Electron Devices. ED-39:1992;331-338.
8. P.T. Landsberg, Recombination in Semiconductors, Cambridge Univ. Press, Cambridge, 1991, pp. 172-182.
9. Vincent G., Chantre A., Bois D. Journal of Applied Physics. 50:1979;5484-5487.
10. G.A.M. Hurkx, F.G. O'Hara, M.P.G. Knuvers, Proceedings of the ESSDERC, Berlin, 1989, pp. 793-796.
11. Furlan J., Gorup Z., Smole F., Topic M. Solid State Electronics. 43:1999;1673-1676.
12. Shockley W., Read W.T. Physical Review. 87:1952;835-843.
13. Hack M., Shur M. Journal of Applied Physics. 58:1985;997-1020.
14. McElheny P.J., Arch J., Liu H., Fonash S.J. Journal of Applied Physics. 64:1988;1254-1265.
15. Smole F., Furlan J. Journal of Applied Physics. 72:1992;5964-5969.
16. Zeman M., Willemen J.A., Vosteen L.L.A., Tao G., Metselaar J.W. Solar Energy Materials and Solar Cells. 46:1997;81-99.
17. Juška G., Kočka J., Arlauskas K., Jukonis G. Solid State Communications. 75:1990;531-533.
18. Antoniadis H., Schiff E.A. Physical Review B. 43:1991;13957-13966.
19. Esipov S.E. Physical Review B. 44:1991;7930-7934.
20. Nebel C.E., Street R.A., Johnson N.M., Kočka J. Physical Review B. 46:1992;6789-6802.
21. Nebel C.E., Street R.A., Johnson N.M., Tsai C.C. Physical Review B. 46:1992;6803-6814.
22. Marianer S., Shklovskii B.I. Physical Reviw B. 46:1992;13100-13103.
23. Baranovskii S.D., Thomas P. J. Non-Crystal Solids. 198-200:1996;140-145.
24. Gu Q., Schiff E.A., Chevrier J.-B., Equer B. J. Non-Crystal Solids. 198-200:1996;194-197.
25. Hall R.N. Physical Review. 87:1952;387.
26. A. van der Ziel, Solid State Physical Electronics, Prentice-Hall, Englewood Cliffs, New York, 1976, p. 136.
27. Sah C.T. Proc. IEEE. 55:1967;672-684.
28. Dussel G.A., Böer K.W. Physics Status Solidi. 39:1970;375-389.
29. Hartke J.L. Journal of Applied Physics. 39:1968;4871-4873.
30. Joncher A.K. Thin Solid Films. 1:1967;213-234.
31. Dhariwal S.R., Landsberg P.T. Journal of Physics and Chemistry of Solids. 50:1989;363-368.
32. Woo J.C.S., Plummer J.D., Stork Y.M.C. IEEE Transactions on Electron Devices. ED-34:1987;130-137.
33. Huang Q.A., Qin M., Zhang B., Sin J.K.O., Poon M.C. IEEE Electron Devices Letters. 18:1997;616-618.
34. Pelaz L., Oramtes J.L., Vincente J., Bailón L.A., Barbolla J. IEEE Transactions on Electron Devices. ED-41:1994;587-590.
35. A. van der Ziel, ibid., p. 511.
36. Cohen M.H., Fritzsche H., Ovshinsky S.R. Physical Review Letters. 22:1969;1065-1068.
37. R.E.I. Schropp, M. Zeman, Amorphous and Microcrystalline Silicon Solar Cells, Cluver Academic, Boston, MA, 1998, pp. 128-135.
38. Freeman L.B., Dahlke W.E. Solid State Electronics. 13:1970;1483-1503.
39. Lundström I., Svensson C. Journal of Applied Physics. 43:1972;5045-5047.
40. Sarrabayrouse G., Buxo J., Myszkowski A., Esteve D. Review of Physics Applications. 12:1977;433-437.
41. R.B. Adler, A.C. Smith, R.L. Longini, Introduction to Semiconductor Physics, Wiley, New York, 1964, pp. 122-125.
42. H.K. Henisch, Rectifying Semi-Conductor Contacts, Oxford University Press, London, 1957, pp. 197-199.
43. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, p. 261.
44. Arch J.K., Rubinelli F.A., Hou J.Y., Fonash S.J. Journal of Applied Physics B. 69:1991;7057-7066.
45. Zeman M., Van Swaaij R.A.C.M.M., Schroten E., Vosten L.L.A., Metselaar J.W. MRS Symposium Proceedings. 507:1998;409-414.
46. Main C., Owen A.E. Journal of Non-Crystal Solids. 227-230:1998;810-814.
47. Furlan J. IEEE Transactions on Electron Devices. ED-39:1992;448-450.
48. Furlan J., Gorup Z., Smole F., Topic M. Solar Energy Materials and Solar Cells. 66(1-4):2000;147-153.