Observation of oscillatory resistance behavior in coupled Bernal and rhombohedral stacking graphene

ACS Nano

Volumn 5, Issue 7, 2011, Pages 5490-5498

  Liu, Yanping ^a   Lew, Wen Siang ^a   Goolaup, Sarjoosing ^a   Liew, Hwi Fen ^a   Wong, Seng Kai ^b   Zhou, Tiejun ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

Bernal and rhombohedral stacking; Coulomb interaction; excitonic gap; graphene; oscillatory resistance; short range scattering; thermally activated

Indexed keywords

BERNAL AND RHOMBOHEDRAL STACKING; EXCITONIC GAP; OSCILLATORY RESISTANCE; SHORT-RANGE SCATTERING; THERMALLY ACTIVATED;

COULOMB INTERACTIONS; ENERGY GAP; MAGNETIC FIELDS;

GRAPHENE;

EID: 79961079498     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn200771e     Document Type: Conference Paper

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