Weak localization in graphene

Solid State Communications

Volumn 143, Issue 1-2, 2007, Pages 33-38

  Fal'ko, Vladimir I ^a   Kechedzhi, K ^a   McCann, E ^a   Altshuler, B L ^b   Suzuura, H ^c   Ando, T ^d  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b Columbia University ^*  (United States)

^c HOKKAIDO UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. Disordered systems; D. Electronic transport; D. Quantum localization

Indexed keywords

DENSITY (SPECIFIC GRAVITY); ELECTRON TRANSPORT PROPERTIES; MAGNETORESISTANCE; MONOLAYERS; QUANTUM THEORY; RANDOM PROCESSES;

CARRIER DISPERSION; DISORDERED SYSTEMS; QUANTUM LOCALIZATION; WEAK LOCALIZATION;

GRAPHITE;

EID: 34249864461     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.03.049     Document Type: Article

References (54)

1. DiVincenzo D., and Mele E. Phys. Rev. B 29 (1984) 1685
2. Semenoff G.W. Phys. Rev. Lett. 53 (1984) 2449
3. Haldane F.D.M. Phys. Rev. Lett. 61 (1988) 2015
4. Zheng Y., and Ando T. Phys. Rev. B 65 (2002) 245420
5. Peres N.M.R., Guinea F., and Castro Neto A.H. Phys. Rev. B 73 (2006) 125411
6. Castro Neto A.H., Guinea F., and Peres N.M.R. Phys. Rev. B 73 (2006) 205408
7. Ando T., Nakanishi T., and Saito R. J. Phys. Soc. Japan 67 (1998) 2857
8. McCann E., and Fal'ko V.I. Phys. Rev. Lett. 96 (2006) 086805
9. Nilsson J., et al. Phys. Rev. B 73 (2006) 214418
10. Guinea F., and Castro Neto A.H. Peres, Phys. Rev. B 73 (2006) 245426
11. Koshino M., and Ando T. Phys. Rev. B 73 (2006) 245403
12. Partoens B., and Peeters F.M. Phys. Rev. B 74 (2006) 075404
13. Novoselov K.S., et al. Science 306 (2004) 666
14. Novoselov K.S., et al. Nature 438 (2005) 197
15. Zhang Y., et al. Phys. Rev. Lett. 94 (2005) 176803
16. Zhang Y., et al. Nature 438 (2005) 201
17. Novoselov K.S., et al. Nature Phys. 2 (2006) 177
18. Suzuura H., and Ando T. Phys. Rev. Lett. 89 (2002) 266603
19. Khveshchenko D.V. Phys. Rev. Lett. 97 (2006) 036802
20. Hikami S., Larkin A.I., and Nagaoka Y. Progr. Theoret. Phys. 63 (1980) 707
21. Al'tshuler B.L., et al. Sov. Phys. JETP 54 (1981) 411
22. Al'tshuler B.L., et al. Zh. Eksp. Teor. Fiz. 81 (1981) 768
23. Altshuler B.L., Khmel'nitzkii D., Larkin A.I., and Lee P.A. Phys. Rev. B 22 (1980) 5142
24. McCann E., et al. Phys. Rev. Lett. 97 (2006) 146805
25. Kechedzhi K., et al. Phys. Rev. Lett. 98 (2007) 176806
26. Morozov S.V., et al. Phys. Rev. Lett. 97 (2006) 016801
27. Morpurgo A.F., and Guinea F. Phys. Rev. Lett. 97 (2006) 196804
28. Iordanskii S.V., and Koshelev A.E. JETP Lett. 41 (1985) 574
29. Ludwig A.W.W., Fisher M.P.A., Shankar R., and Grinstein G. Phys. Rev. B 50 (1994) 7526
30. L Aleiner I., and Efetov K.B. Phys. Rev. Lett. 97 (2006) 236801
31. Ziegler K. Phys. Rev. Lett. 97 (2006) 266802
32. Ostrovsky P.M., Gorny I.V., and Mirlin A.D. Phys. Rev. B 74 (2006) 235443
33. Cheianov V., and Fal'ko V.I. Phys. Rev. B 74 (2006) 041403
34. - 1, 0).
35. Wallace P.R. Phys. Rev. 71 (1947) 622
36. Slonczewski J.C., and Weiss P.R. Phys. Rev. 109 (1958) 272
37. x.
38. This effect is similar to the recent observation that an in-plane magnetic field induces asymmetry in semiconductor heterostructures and, thus, suppresses the WL effect
39. Fal'ko V., and Jungwirth T. Phys. Rev. B 65 (2002) 081306
40. Zumbuhl D., et al. Phys. Rev. B 69 (2004) 121305
41. l, s, l = x, y, x.
42. McCann E., and Fal'ko V. Phys. Rev. B 71 (2005) 085415
43. Peres N., Guinea F., and Castro Neto A. Phys. Rev. B 73 (2006) 125411
44. Shon N.H., and Ando T. J. Phys. Soc. Japan 67 (1998) 2421
45. Foster M., and Ludwig A. Phys. Rev. B 73 (2006) 155104
46. Λ symmetry of the dominant part of the free-electron and disorder Hamiltonian.
47. In this calculation we take into account double spin degeneracy.
48. Dresselhaus M.S., and Dresselhaus G. Adv. Phys. 51 (2002) 1
49. Tatar R.C., and Rabii S. Phys. Rev. B 25 (1982) 4126
50. Charlier J.-C., Gonze X., and Michenaud J.-P. Phys. Rev. B 43 (1991) 4579
51. Gorbachev R.V., et al. Phys. Rev. Lett. 98 (2007) 176805
52. At energies below the Lifshitz transition [5], the bilayer spectrum in each of the four Fermi surface pockets is linear, and the integral Berry phase 2 π in bilayer graphene [5,9] is divided into Berry phase π in each of the three side pockets and-π in the central one.
53. Wu X., et al. Phys. Rev. Lett. 98 (2007) 136801
54. McCann E., and Fal'ko V.I. J. Phys. Condens. Matter 16 (2004) 2371