Graphene-metal interface: Two-terminal resistance of low-mobility graphene in high magnetic fields

Nano Letters

Volumn 8, Issue 6, 2008, Pages 1700-1703

  Krstić, Vojislav ^a   Obergfell, Dirk ^b   Hansel, Stefan ^c   Rikken, Geert L J A ^c   Blokland, Janneke H ^d   Ferreira, Mauro S ^a   Roth, Siegmar ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^c Laboratoire National des Champs Magnetiques Intenses   (France)

^d RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; MAGNETIC FIELDS;

ELECTRON DENSITIES; ELECTRON TRANSMISSION PROBABILITIES; FILLING FACTORS; GRAPHENE; GRAPHENE LAYERS; HIGH MAGNETIC FIELDS; IMPURITY CONCENTRATIONS; LOW MOBILITIES; MAGNETO TRANSPORTS; METAL ELECTRODES; METAL INTERFACES; ORGANO-METALLIC; SPIN-SPLITTING; SUB LATTICES; THERMALLY ACTIVATED;

ELECTRONS;

GRAPHITE; METAL;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; ELECTRON; IMPEDANCE; MICROELECTRODE; RADIATION EXPOSURE;

ELECTRIC IMPEDANCE; ELECTROMAGNETIC FIELDS; ELECTRONS; GRAPHITE; METALS; MICROELECTRODES;

EID: 48449097121     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl080634k     Document Type: Article

References (21)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Nature 2005, 438, 197.
2. Zhang, Y.; Tan, Y. W.; Stormer, H. L.; Kim, P. Nature 2005, 438, 201.
3. Gusynin, V. P.; Sharapov, S. G. Phys. Rev. Lett. 2005, 95, 146801.
4. Wang, W; Lee, T.; Kamdar, M.; Reed, M. A.; Stewart, M. P.; Hwang, J. J.; Tour, J. M. Ann. N.Y. Acad. Sci. 2003, 1006, 36.
5. Davis, J. J.; Morgan, D. A.; Wrathmell, C. L.; Axford, D. N.; Zhao, J.; Wang, N. J. Mater. Chem. 2005, 15, 2160.
6. Sanvito, S. Nat. Mat. 2007, 6, 803.
7. Fang, F. F.; Stiles, P. J. Phys. Rev. B 1983, 27, 6487.
8. Fang, F. F.; Stiles, P. J. Phys. Rev. B 1984, 29, 3749.
9. Rikken, G. L. J. A.; van Haaren, J. A. M. M; van der Wel, W.; van Gelder, A. P.; van Kempen, A. P.; Wyder, P.; André, J. P.; Ploog, K.; Weimann, Phys. Rev. B 1988, 37, 6181.
10. Ishigami, M.; Chen, J. H.; Cullen, W. G.; Fuhrer, M. S.; Williams, E. D. Nano Lett. 2007, 7, 1643.
11. Moser, J.; Barreiro, A.; Bachtold, A. Appl. Phys. Lett. 2007, 91, 163513.
12. Lemme, M. C.; Echtermeyer, T. J.; Baus, M.; Kurz, H. IEEE Electronic Device Letter 2007, 28, 282.
13. Huard, B.; Sulpizino, J. A.; Standfer, N.; Todd, K.; Yang, B.; Goldhaber-Gordon, D. H. Phys. Rev. Lett. 2007, 98, 236803.
14. Williams, J. R.; DiCarlo, L.; Marcus, C. M. Science 2007, 317, 638.
15. Novoselov, K. S.; Jiang, D.; Shedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451.
16. Novoselov, K. S.; Jiang, Z.; Zhang, Y.; Morozov, S. V.; Stormer, H. L.; Zeitler, U.; Maan, J. C.; Boebinger, B. S.; Kim, P.; Geim, A. K. Science 2007, 315, 1379.
17. Casiraghi, C.; Hartschuh, A.; Lidorikis, E.; Qian, H.; Harutyunyan, H.; Gokus, T.; Novoselov, K. S.; Ferrari, A. C. Nano Lett. 2007, 7, 2711.
18. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; Geim, A. K. Phys. Rev. Lett. 2006, 97, 187401.
19. Halulǩa, M.; Obergfell, D.; Meyer, J. C.; Scalia, G.; Ulbricht, G.; Krauss, B.; Chae, D. H.; Lohmann, T.; Lebert, M.; Kaempgen, M.; Hulman, M.; Smet, J.; Roth, S.; von Klitzing, K. Phys. Status Solidi B 2007, 244, 4143.
20. Zhang, Y.; Jiang, Z.; Small, J. P.; Purewal, M. S.; Tan, Y. W.; Fazlollahi, M.; Chudow, J. D.; Jaszczak, J. A.; Stormer, H. L.; Kim, P. Phys. Rev. Lett. 2006, 96, 136806.
21. Khveshchenko, D. V. Phys. Rev. Lett. 2001, 87, 206401.