Mn configuration in III-V semiconductors and its influence on electric transport and semiconductor magnetism

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 12, 2009, Pages 2769-2777

  Wolos, Agnieszka ^a,b   Piersa, Miroslaw ^c   Strzelecka, Grazyna ^c   Korona, Krzysztof P ^a   Hruban, Andrzej ^c   Kaminska, Maria ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CRITICAL CONCENTRATION; ELECTRIC TRANSPORT; FERROMAGNETIC ORDERINGS; GAAS; HIGH MOBILITY; HIGH TEMPERATURE; HOLE WAVE FUNCTIONS; HOPPING CONDUCTANCE; HOST CRYSTALS; II-IV SEMICONDUCTORS; III-V COMPOUNDS; INP; IONIZATION ENERGIES; LITERATURE DATA; LOW TEMPERATURES; METALLIC SIDE; MN CONCENTRATIONS; MN IMPURITY; P-TYPE CONDUCTIVITY; WIDE BAND GAP;

BUILDING MATERIALS; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; FERROMAGNETISM; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM NITRIDE; HOLE CONCENTRATION; INSULATING MATERIALS; MANGANESE COMPOUNDS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES;

MANGANESE;

EID: 77955456044     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982521     Document Type: Conference Paper

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