Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Hang, Qingling ^a   Wang, Fudong ^b   Buhro, William E ^b   Janes, David B ^a  

^a PURDUE UNIVERSITY   (United States)

^b WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FERMI LEVEL; NANOSTRUCTURED MATERIALS; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SYNTHESIS (CHEMICAL);

N -CHANNEL CONDUCTION; P -CHANNEL CHARACTERISTICS; SOLUTION-LIQUID-SOLID TECHNIQUE;

FIELD EFFECT TRANSISTORS;

EID: 33846990494     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2457249     Document Type: Article

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