Structural analysis of PTCDA monolayers on epitaxial graphene with ultra-high vacuum scanning tunneling microscopy and high-resolution X-ray reflectivity

Surface Science

Volumn 605, Issue 17-18, 2011, Pages 1685-1693

  Emery, Jonathan D ^a   Wang, Qing Hua ^a   Zarrouati, Marie ^b   Fenter, Paul ^c   Hersam, Mark C ^a,d   Bedzyk, Michael J ^a  

^a Northwestern University   (United States)

^b PSL RESEARCH UNIVERSITY   (France)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Epitaxial graphene; PTCDA; Silicon carbide; STM; XRR

Indexed keywords

CHARACTERIZATION; ELECTRONIC PROPERTIES; FILM GROWTH; MONOLAYERS; REFLECTION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; ULTRAHIGH VACUUM; WIDE BAND GAP SEMICONDUCTORS; X RAYS;

ELECTRON DENSITY PROFILES; EPITAXIAL GRAPHENE; LEAST SQUARES ANALYSIS; PERYLENE-3 ,4 ,9 ,10-TETRACARBOXYLIC DIANHYDRIDE; PHASE RETRIEVAL ALGORITHM; PTCDA; SELF ASSEMBLED FILMS; STRUCTURAL CHARACTERIZATION;

GRAPHENE;

EID: 79960719206     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2010.11.008     Document Type: Article

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