Structural and electronic properties of PTCDA thin films on epitaxial graphene

ACS Nano

Volumn 3, Issue 11, 2009, Pages 3431-3436

  Huang, Han ^a   Chen, Shi ^a   Gao, Xingyu ^a   Chen, Wei ^a   Wee, Andrew Thye Shen ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Epitaxial graphene; Photoemission spectroscopy; PTCDA; Scanning tunneling microscopy; Silicon carbide

Indexed keywords

ELECTRONIC COUPLING; EPITAXIAL GRAPHENE; HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY; IN-SITU; LAYER-BY-LAYER GROWTH; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; MOLECULAR PLANES; PERYLENE TETRACARBOXYLIC; PHOTOEMISSION SPECTROSCOPY; PTCDA; PTCDA FILMS; PTCDA THIN FILMS; SINGLE LAYER; STEP EDGE; WIDE BAND GAP;

CHARGE TRANSFER; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; ENERGY ABSORPTION; EPITAXIAL FILMS; GRAPHENE; GRAPHITE; ION EXCHANGE; LUMINESCENCE OF ORGANIC SOLIDS; MONOLAYERS; PHOTOEMISSION; SCANNING; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; WIND TUNNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73249132169     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn9008615     Document Type: Article

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