Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Yang, Ziwen ^a   Li, Rui ^a   Wei, Qiyuan ^b   Yu, Tao ^a   Zhang, Yanzhao ^a   Chen, Weihua ^a   Hu, Xiaodong ^a  

^a PEKING UNIVERSITY   (China)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; OPTICAL GAIN; OPTICAL PROPERTIES; PIEZOELECTRICITY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WAVE FUNCTIONS;

ELECTRON HOLES; GAIN CHARACTERISTICS; INGAN/GAN; LIGHT-EMITTING DEVICES; OPTICAL GAIN PROPERTIES; PIEZO-ELECTRIC FIELDS; POLARIZATION DEGREES; QUANTUM WELLS; WAVE-FUNCTION;

INTEGRATED OPTOELECTRONICS;

EID: 60349089616     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075862     Document Type: Article

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