Ion irradiation: A tool to understand oxide RRAM mechanism

Radiation Effects and Defects in Solids

Volumn 166, Issue 8-9, 2011, Pages 724-733

  Joshi, Utpal S ^a  

^a GUJARAT UNIVERSITY   (India)

Author keywords

binary TMO; resistance switching; RRAM; swift heavy ion irradiation

Indexed keywords

BINARY OXIDES; BINARY TMO; CANDIDATE MATERIALS; CAPACITOR STRUCTURES; ELASTIC RECOIL DETECTION ANALYSIS; FILM NANOSTRUCTURES; INTERFACE EFFECT; METALLIC FILAMENTS; MIXED OXIDE; NONVOLATILE MEMORY DEVICES; OXIDE ELECTRONICS; PEROVSKITE MANGANITES; PLANAR STRUCTURE; RESEARCH ACTIVITIES; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RRAM; SHI IRRADIATION; SWIFT HEAVY ION IRRADIATION; SWIFT HEAVY IONS; SWITCHING CHARACTERISTICS; TIO; TRANSITION-METAL OXIDES;

CHARACTERIZATION; DEFECTS; ELECTRIC RESISTANCE; FLASH MEMORY; HEAVY IONS; IRRADIATION; MANGANESE OXIDE; OXIDE FILMS; PEROVSKITE; RANDOM ACCESS STORAGE; SURFACE STRUCTURE; SWITCHING; TITANIUM DIOXIDE; TRANSITION METALS;

TRANSITION METAL COMPOUNDS;

EID: 79960675278     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150.2011.583246     Document Type: Conference Paper

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