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Volumn 219-220, Issue 1-4, 2004, Pages 206-214

Existence of transient temperature spike induced by SHI: Evidence by ion beam analysis

Author keywords

Electronic energy loss; Electronic sputtering; Interface modifications; On line ERDA

Indexed keywords

DIFFUSION; ENERGY DISSIPATION; LASER PULSES; MATHEMATICAL MODELS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS;

EID: 2342501829     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.055     Document Type: Conference Paper
Times cited : (45)

References (37)
  • 3
    • 26544435732 scopus 로고    scopus 로고
    • Proceedings of International Conference on Ion Implantation
    • Proceedings of International Conference on Ion Implantation, Nucl. Instr. and Meth. B 121 (1997).
    • (1997) Nucl. Instr. and Meth. B , vol.121
  • 37
    • 0037765606 scopus 로고    scopus 로고
    • these Proceedings. doi:10.1016/j.nimb.2004.01.083; doi:10.1016/j.nimb. 2004.01.169
    • S.K. Srivastava et al., Nucl. Instr. and Meth. B, these Proceedings. doi:10.1016/j.nimb.2004.01.083; doi:10.1016/j.nimb.2004.01.169.
    • Nucl. Instr. and Meth. B
    • Srivastava, S.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.