Electrode dependence and film resistivity effect in the electric-field-induced resistance-switching phenomena in epitaxial NiO films

Materials Science and Engineering: B

Volumn 148, Issue 1-3, 2008, Pages 40-42

  Ishihara, T ^a   Ohkubo, I ^a   Tsubouchi, K ^a   Kumigashira, H ^a,d   Joshi, U S ^b   Matsumoto, Y ^c   Koinuma, H ^a,d   Oshima, M ^a,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b GUJARAT UNIVERSITY   (India)

^c Tokyo Institute of Technology ^*  (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Electrical measurements; Epitaxy thin films; Metal insulator metal structure; Nickel oxide

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; GRAIN BOUNDARIES; NICKEL OXIDE; PULSED LASER DEPOSITION;

ELECTRICAL MEASUREMENTS; ELECTRODE DEPENDENCE; ELECTRODE INTERFACES; EPITAXY THIN FILMS; FILM RESISTIVITY; METAL INSULATOR METAL STRUCTURE;

EPITAXIAL FILMS;

EID: 38949117537     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2007.09.073     Document Type: Article

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