Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metal-insulator-semiconductor Schottky diodes

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Yildiz, D E ^a   Dokme I ^b  

^a HITIT UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AC ELECTRICAL CONDUCTIVITY; APPLIED VOLTAGES; ELECTRIC MODULUS; ELECTRICAL CONDUCTIVITY; FREQUENCY INDEPENDENT; FREQUENCY RANGES; GATE VOLTAGES; HIGHER FREQUENCIES; IMAGINARY PARTS; INTERFACE STATE; INTERFACIAL POLARIZATION; LOSS TANGENT; LOW FREQUENCY; METAL-INSULATOR-SEMICONDUCTORS; NEGATIVE VOLTAGE; REAL PART; SCHOTTKY DIODES; VOLTAGE DEPENDENCE;

DIELECTRIC LOSSES; ELECTRIC CONDUCTIVITY; METAL INSULATOR BOUNDARIES; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960480322     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3602090     Document Type: Article

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