Carbon nanotube transistor circuits: Circuit-level performance benchmarking and design options for living with imperfections

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 70-72

  Deng, Jie ^a   Patil, Nishant ^a   Ryu, Koungmin ^b   Badmaev, Alexander ^b   Zhou, Chongwu ^b   Mitra, Subhasish ^a   Wong, H S Philip ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BENCHMARKING; CARBON NANOTUBES; CIRCUIT THEORY; CMOS INTEGRATED CIRCUITS; LOGIC DESIGN;

LOGIC OPERATIONS; METALLIC NANOTUBES; ONE-DIMENSIONAL CARBON NANOTUBE;

FIELD EFFECT TRANSISTORS;

EID: 34548848512     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2007.373592     Document Type: Conference Paper

References (13)

1. H.-S. P. Wong, et al., "Carbon Nanotube Field Effect Transistors -Fabrication, Device Physics and Circuit Implications," ISSCG Dig. Tech. Papers, pp. 370- 371, Feb. 2003.
2. J. Deng, and H.-S. P. Wong, "A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors," Proc. Intl. Conf. Simulation of Semiconductor Processes and Devices, pp. 166-169, Sept., 2006.
3. I. Amlani, et al., "First Demonstration of AC Gain From a Single-walled Carbon Nanotube Common-Source Amplifier," Proc. Intl. Electron Devices Meeting, Paper 20.7, Dec., 2006.
4. http://www.itrs.net/Links/2005ITRS/Home2005.htm
5. J. Guo, et al., "Performance Analysis and Design Optimisation of Near Ballistic Carbon Nanotube Field-Effect Transistors," Proc. Intl. Electron-Devices Meeting, pp. 703-706, Dec., 2004.
6. http://www.eas.asu.edu/-ptm/latest.html
7. D. Kang, et al., "Oxygen-Induced P-type Doping of A Long Individual Single-walled Carbon Nanotube," Nanotechnology, vol. 16, pp. 1048-1062, 2005.
8. Y-C Tseng, et al., "Effect of Diameter Variation in a Large Set of Carbon Nanotube Transistors," Nano Letters, vol. 6, pp. 1864-1368, 2006.
9. E. Saito, G. Dresselhaus and M. Dresselhaus, "Physical Properties of Carbon Nanotubes," Imperial College Press., London, UK, 1998.
10. Y. Li, et al., "Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method" Nana Letters, vol. 4, pp. 317, 2004.
11. P. G. Collins, M. S. Arnolds, and P. Avouris, "Engineering Carbon Nanotubes and.Nanotube Circuits using Electrical Breakdown," Science, vol. 292, pp. 706-709, 2001.
12. A. Hassanien, et al., "Selective Etching of Metallic Single-Wall Carbon Nanotubes with Hydrogen Plasma," Nanotechnology, vol. 16, pp. 278-281, 2005.
13. S. Han, X. Liu, and C. Zhou, "Template-Free Directional Growth of Single-Walled Carbon Nanotubes on a- and r-Plane Sapphire," J. Am. Chem. Soc., vol. 127, pp. 5294-5295, 2005.