Threshold voltage and on-off ratio tuning for multiple-tube carbon nanotube FETs

IEEE Transactions on Nanotechnology

Volumn 8, Issue 1, 2009, Pages 4-9

  Lin, Albert ^a   Patil, Nishant ^a   Ryu, Koungmin ^b   Badmaev, Alexander ^b   Gomez De Arco, Lewis ^b   Zhou, Chongwu ^b   Mitra, Subhasish ^a   Philip Wong, H S ^a  

^a STANFORD UNIVERSITY   (United States)

^b UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

Carbon nanotube field effect transistor (CNFET); ICs; Nanotechnology

Indexed keywords

ELECTRON MULTIPLIERS; FIELD EFFECT TRANSISTORS; NANOCOMPOSITES; NANOTECHNOLOGY; NANOTUBES; THRESHOLD VOLTAGE; TRANSISTORS; TUNING;

ANALYSIS TOOLS; AS DOPING; CARBON NANOTUBE FIELD EFFECT TRANSISTOR (CNFET); DEGREE OF FREEDOMS; DESIGN SPACES; DEVICE SYNTHESIS; ICS; NANOTUBE DEVICES; ON-OFF RATIOS; POST-PROCESSING TECHNIQUES; PROCESSING TECHNIQUES; PROOF OF CONCEPTS;

CARBON NANOTUBES;

EID: 59049099173     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2004706     Document Type: Article

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