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Volumn 14, Issue 9, 2011, Pages

ZnO thin-film transistors with SiNx/SiOx stacked gate insulators: Trap densities and N2O flow rate dependence

(9) Kimura, Mutsumi a,b Furuta, Mamoru c Kamada, Yudai d,e Hiramatsu, Takahiro c Matsuda, Tokiyoshi a Furuta, Hiroshi c Li, Chaoyang c Fujita, Shizuo d Hirao, Takashi c

a RYUKOKU UNIVERSITY (Japan)

b High Tech Research Center (Japan)

c KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

d Graduate School of Engineering (Japan)

e KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STABILITY; RATE DEPENDENCE; STACKED GATE; TRAP DENSITY; TRAP STATE; ZNO;

SILICON NITRIDE; THIN FILM TRANSISTORS; ZINC OXIDE;

FLOW RATE;

EID: 79960239566 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3601058 Document Type: Article

Times cited : (2)

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