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Volumn 6, Issue 4, 2010, Pages 221-225

Trap states of a-ZnO thin film transistors

Author keywords

Isochronal annealing; Oxide TFT; Stability; ZnO

Indexed keywords

ANNEALING TEMPERATURES; HIGH TEMPERATURE RECOVERIES; HYDROGEN DIFFUSION; ISOCHRONAL ANNEALING; LIGHT ILLUMINATION; LOW TEMPERATURES; NEGATIVE SHIFT; POSITIVE GATE BIAS; POSITIVE SHIFT; SUBTHRESHOLD; TRANSFER CURVES; TRAP CHARGE; TRAP STATE; ZNO;

EID: 78650965762     PISSN: 17388090     EISSN: None     Source Type: Journal    
DOI: 10.3365/eml.2010.12.221     Document Type: Article
Times cited : (14)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.