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Volumn 6, Issue 4, 2010, Pages 221-225
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Trap states of a-ZnO thin film transistors
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Author keywords
Isochronal annealing; Oxide TFT; Stability; ZnO
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Indexed keywords
ANNEALING TEMPERATURES;
HIGH TEMPERATURE RECOVERIES;
HYDROGEN DIFFUSION;
ISOCHRONAL ANNEALING;
LIGHT ILLUMINATION;
LOW TEMPERATURES;
NEGATIVE SHIFT;
POSITIVE GATE BIAS;
POSITIVE SHIFT;
SUBTHRESHOLD;
TRANSFER CURVES;
TRAP CHARGE;
TRAP STATE;
ZNO;
METALLIC FILMS;
OPTICAL FILMS;
RECOVERY;
THIN FILM TRANSISTORS;
THIN FILMS;
ZINC OXIDE;
ANNEALING;
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EID: 78650965762
PISSN: 17388090
EISSN: None
Source Type: Journal
DOI: 10.3365/eml.2010.12.221 Document Type: Article |
Times cited : (14)
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References (20)
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