Optimum packing density and crystal structure of tin-doped indium oxide thin films for high-temperature annealing processes

Applied Surface Science

Volumn 257, Issue 21, 2011, Pages 9207-9212

  Kato, Kazuhiro ^a   Omoto, Hideo ^a   Tomioka, Takao ^a   Takamatsu, Atsushi ^a  

^a CENTRAL GLASS CO LTD   (Japan)

Author keywords

Annealing; ITO; Packing density; Resistivity; Sputtering; Thin film

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON SCATTERING; EPITAXIAL GROWTH; FLOW OF GASES; HALL MOBILITY; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; MICROSTRUCTURE; OXIDE FILMS; OXYGEN; SPUTTERING; TIN OXIDES;

DIFFRACTION MEASUREMENTS; ELECTRICAL PROPERTIES AND MICROSTRUCTURE; HIGH PACKING DENSITY; HIGH-TEMPERATURE ANNEALING; PACKING DENSITY; SPUTTERING DEPOSITION; TIN DOPED INDIUM OXIDE; X RAY REFLECTIVITY;

THIN FILMS;

EID: 79960161707     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.06.004     Document Type: Article

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