Doping mechanisms of Sn in In2O3 powder studied using 119Sn Mössbauer spectroscopy and X-ray diffraction

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2856-2862

  Yamada, Naoomi ^a   Yasui, Itaru ^a   Shigesato, Yuzo ^b   Li, Hongring ^c   Ujihira, Yusuke ^c   Nomura, Kiyoshi ^d  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

119Sn M ssbauer spectroscopy; Chemical state; Doping mechanism; ITO; X ray diffraction

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; LATTICE CONSTANTS; MOSSBAUER SPECTROSCOPY; POWDERS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DOPING; X RAY CRYSTALLOGRAPHY;

COORDINATION NUMBERS; DECONVOLUTION ANALYSIS; INDIUM TIN OXIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032648972     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2856     Document Type: Article

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