Electron scattering mechanisms in indium-tin-oxide thin films: Grain boundary and ionized impurity scattering

Vacuum

Volumn 75, Issue 3, 2004, Pages 275-282

  Lee, Ho Chul ^a   Park, O Ok ^b  

^a Samsung Corning Co Ltd   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Carrier concentration; Carrier mobility; Crystallinity; DC magnetron sputtering; Hall measurement; Indium tin oxide (ITO); Process temperature

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLIZATION; DIFFRACTOMETERS; ELECTRON SCATTERING; GRAIN BOUNDARIES; HALL EFFECT; IMPURITIES; INDIUM COMPOUNDS; IONIZATION; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; TEMPERATURE MEASUREMENT; TIN COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

HALL MEASUREMENTS; PROCESS TEMPERATURE;

THIN FILMS;

EID: 2942737089     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.03.008     Document Type: Article

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