Dielectric function of Al-rich AlInN in the range 1-18 eV

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 7, 2011, Pages 1517-1519

  Sakalauskas, E ^a   Behmenburg, H ^b,c   Schley, P ^a   Gobsch, G ^a   Giesen, C ^b   Kalisch, H ^c   Jansen, R H ^c   Heuken, M ^b,c   Goldhahn, R ^a,d  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b AIXTRON AG   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

^d OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

III V nitrides; optical properties; spectroscopic ellipsometry

Indexed keywords

ALLOY FILM; BAND-GAP VALUES; CRITICAL POINTS; DIELECTRIC FUNCTIONS; DIRECT ABSORPTION; GAN BUFFER; HIGH ENERGY; HIGH QUALITY; HIGH-FREQUENCY DIELECTRICS; III-V NITRIDES; IMAGINARY PARTS; METAL-ORGANIC VAPOUR PHASE EPITAXY; PHOTON ENERGY RANGE; PSEUDOMORPHIC GROWTH; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; VAN HOVE SINGULARITIES; XRD MEASUREMENTS;

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; GALLIUM NITRIDE; OPTICAL PROPERTIES; PHOTONS; SPECTROSCOPIC ELLIPSOMETRY; VANADIUM;

ALUMINUM;

EID: 79960102119     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000931     Document Type: Article

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