Influence of silicon orientation and cantilever undercut on the determination of the Young's modulus of thin films

Microelectronic Engineering

Volumn 88, Issue 8, 2011, Pages 2345-2348

  Nazeer, H ^a   Woldering, L A ^a   Abelmann, L ^a   Nguyen, M D ^a   Rijnders, G ^a   Elwenspoek, M C ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

Cantilever; DRIE; Finite element method; Orientation; PZT; Resonance frequency; Young's modulus

Indexed keywords

CANTILEVER; DRIE; PZT; RESONANCE FREQUENCY; YOUNG'S MODULUS;

DEPOSITION; ELASTIC MODULI; ELASTICITY; FINITE ELEMENT METHOD; NANOCANTILEVERS; NATURAL FREQUENCIES; PULSED LASER DEPOSITION; SILICON; THIN FILMS; VAPOR DEPOSITION;

CRYSTAL ORIENTATION;

EID: 79960069135     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.01.028     Document Type: Conference Paper

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