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Journal of Luminescence

Volumn 131, Issue 12, 2011, Pages 2457-2462

Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

(3) Dangbegnon J K a Talla, K a Botha, J R a

a NELSON MANDELA METROPOLITAN UNIVERSITY (South Africa)

Author keywords

Annealing; Arsenic diffusion; Photoluminescence; ZnO

Indexed keywords

ACTIVATION ENERGY E; AMBIENTS; ANNEALING ENVIRONMENT; ANNEALING TEMPERATURES; ARSENIC DIFFUSION; GAAS SUBSTRATES; LOCAL STRAINS; PL SPECTRA; POSTGROWTH ANNEALING; RADIATIVE CENTER; STRUCTURAL DEFECT; TEMPERATURE DEPENDENT; ZNO; ZNO THIN FILM; ZNO/GAAS;

ACTIVATION ENERGY; ARSENIC; DEFECTS; GALLIUM ALLOYS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FILMS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

ANNEALING;

EID: 79960011733 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2011.06.007 Document Type: Article

Times cited : (3)

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