ZnO films grown by MOCVD on GaAs substrates: Effects of a Zn buffer deposition on interface, structural and morphological properties

Journal of Crystal Growth

Volumn 311, Issue 8, 2009, Pages 2564-2571

  Agouram, S ^a   Martinez Tomas M C ^a   Munoz Sanjose V ^a  

^a UNIVERSITY OF VALENCIA   (Spain)

Author keywords

A1. High resolution X ray diffraction; A2. Metal organic chemical vapour deposition; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A2. METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION; B1. OXIDES; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS;

ATMOSPHERIC PRESSURE; CHEMICAL REACTIVITY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIFFRACTION; EMISSION SPECTROSCOPY; HIGH RESOLUTION ELECTRON MICROSCOPY; INDUSTRIAL CHEMICALS; LATTICE MISMATCH; METALLIC FILMS; METALLIC GLASS; ORGANIC CHEMICALS; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; SULFUR COMPOUNDS; TRANSITION METAL COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAYS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 65249128633     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.02.026     Document Type: Article

References (34)

1. Srikant V., and Clarke D.R. J. Appl. Phys. 83 (1998) 5447
2. Triboulet R., and Perrière J. Prog. Cryst. Growth Charact. Mater. 47 (2003) 65
3. Özgür U., Alivov Ya.I., Liu C., Teke A., Reshchikov M.A., Dogan S., Avrutin V., Cho S.J., and Morkoç H. J. Appl. Phys. 98 (2005) 041301
4. Cui Y., Du G., Zhang Y., Zhu H., and Zhang B. J. Cryst. Growth 282 (2005) 389
5. Lee W., Jeong M., and Myoung J. Acta Mater. 52 (2004) 3949
6. Bang K., Hwang D., Jeong M., Sohn K., and Myoung J. Solid State Commun. 126 (2003) 623
7. Ryu Y.R., Kim W.J., and White H.W. J. Cryst. Growth 219 (2000) 419
8. Ryu M.K., Lee S.H., Jang M.S., Panin G.N., and Kang T.W. J. Appl. Phys. 92 (2002) 154
9. Lee W., Hwang D., Jeong M., Lee M., Oh M., Choi W., and Myoung J. Appl. Surf. Sci. 221 (2004) 32
10. Ramamoorthy K., Sanjeeviraja C., Jayachandran M., Sankaranarayanan K., Ganesan V., Misra P., and Kukreja L.M. Mater. Sci. Semicond. Proc. 8 (2005) 555
11. Matsumoto T., Nishimura K., Nabetani Y., and Kato T. Phys. Status Solidi B 241 (2004) 591
12. Ashrafi A.A., Ueta A., Kumano H., and Suemune I. J. Cryst. Growth 221 (2000) 435
13. Ashrafi A.B.M.A., Ueta A., Avramescu A., Kumano H., Suemune I., Ok Y., and Seong T. Appl. Phys. Lett. 76 (2000) 550
14. Allwood D., Mason N., Mowbray A., and Palmer R. J. Cryst. Growth 248 (2003) 108
15. Allwood D.A., Carline R.T., Mason N.J., Pickering C., Tanner B.K., and Walker P.J. Thin Solid Films 364 (2000) 33
16. Rogers D.J., Teherani F.H., Monteiro T., Soares M., Neves A., Carmo M., Pereira S., Correia M.R., Lusson A., Alves E., Barradas N.P., Morrod J.K., Prior K.A., Kung P., Yasan A., and Razeghi M. Phys. Status Solidi C 3 (2006) 1038
17. Liu H.F., Chua S.J., Hu G.X., Gong H., and Xiang N. J. Appl. Phys. 102 (2007) 083529
18. Liu H.F., Wong A.S.W., Hub G.X., and Gong H. J. Cryst. Growth 310 (2008) 4305
19. Bang K., Hwang D., Lim S., and Myoung J. J. Cryst. Growth 250 (2003) 437
20. Ma Y., Du G., Yin J., and Yang T. Semicond. Sci. Technol. 20 (2005) 1198
21. Stringfellow G.B. Organometallic Vapor-Phase Epitaxy: Theory and Practice (1989), Academic Press Inc., London
22. Chakrabarti R., Ghosh S., and Pal A.K. J. Phys. D: Appl. Phys. 32 (1999) 1258
23. Ohring M. The Materials Science of Thin Films (1989), Academic Press Inc., London
24. Agouram S., Bastos-Segura J.A., and Muñoz-Sanjosé V. Superlattices Microstruct. 42 (2007) 140
25. Powder Diffraction File, JCPDS (1998) Card 36-1451.
26. Powder Diffraction File, JCPDS (1998) Card 11-542.
27. Johnston D., Pavesi L., and Henini M. Microelectron. J. 26 (1995) 759
28. Ghoshal T., Kar S., and Chaudhuri S. J. Cryst. Growth 293 (2006) 438
29. Brien V., Miska P., Bolle B., and Pigeat P. J. Cryst. Growth 307 (2007) 245
30. Scheel H.J., and Fukuda T. Crystal Growth Technology (2003), Wiley, London
31. Lal K., Mitra R., Srinivas G., and Vankar V.D. J. Appl. Cryst. 29 (1996) 222
32. Ratnikov V., Kyutt R., Shubina T., Paskova T., Valcheva E., and Monemar B. J. Appl. Phys. 88 (2000) 6252
33. Sharma S.N., Sharma R.K., Bhagavannarayana G., Samanta S.B., Sood K.N., and Lakshmikumar S.T. Mater. Lett. 60 (2006) 1166
34. Lal K., Goswami S.N.N., Wurfl J., and Hartnagel H.L. J. Appl. Phys. 67 (1990) 4105