Arsenic-related recombination in MOVPE-grown ZnO/GaAs films

Superlattices and Microstructures

Volumn 42, Issue 1-6, 2007, Pages 26-32

  Botha, J R ^a   Roro, K T ^a   Weichsel, C ^a   Leitch, A W R ^a   Weber, J ^b  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Acceptors; GaAs substrate; MOVPE; ZnO

Indexed keywords

ARSENIC; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; SUBSTRATES;

ACCEPTOR LEVELS; HYBRID BEAMS;

THIN FILMS;

EID: 34548478365     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.06.002     Document Type: Article

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