Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy

Journal of Luminescence

Volumn 122-123, Issue 1-2, 2007, Pages 202-204

  Zhang, Z Z ^a   Shen, D Z ^a   Lu, Y M ^a   Zhang, J Y ^a   Li, B H ^a   Zhao, D X ^a   Yao, B ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Acceptor; As diffusion; Photoluminescence; ZnO

Indexed keywords

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL DIFFUSION; ZINC OXIDE;

AS DIFFUSION; EXCITATION DENSITY; FREE ELECTRON ACCEPTORS; PHOTOLUMINESCENCE SPECTRA;

THIN FILMS;

EID: 33750935664     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.01.091     Document Type: Article

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