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Journal of Nuclear Materials

Volumn 414, Issue 3, 2011, Pages 431-439

Ab initio based rate theory model of radiation induced amorphization in β-SiC

(3) Swaminathan, Narasimhan a Morgan, Dane a Szlufarska, Izabela a

a University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; COVALENT MATERIALS; CRITICAL TEMPERATURES; ENERGY LANDSCAPE; EXPERIMENTAL STUDIES; INTERSTITIALS; KEY PARAMETERS; MIGRATION BARRIERS; MULTI-COMPONENT SYSTEMS; MULTICOMPONENTS; RADIATION RESISTANCE; RADIATION-INDUCED; RATE THEORY; RATE-THEORY MODEL; RECOMBINATION AND TRAPPING; TEMPERATURE CURVES;

DEFECTS; SILICON CARBIDE;

AMORPHIZATION;

EID: 79959931933 PISSN: 00223115 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnucmat.2011.05.024 Document Type: Article

Times cited : (47)

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