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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 180, Issue 1-4, 2001, Pages 176-186

Atomic-scale simulation of displacement cascades and amorphization in β-SiC

(3) Gao, F a Weber, W J a Devanathan, R b

a PACIFIC NORTHWEST NATIONAL LABORATORY (United States)

b INDIAN INSTITUTE OF TECHNOLOGY MADRAS (India)

Author keywords

Amorphization; Computer simulation; Defect production; Displacement cascade; SiC

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTAL DEFECTS; MOLECULAR DYNAMICS; PROBABILITY;

DISPLACEMENT CASCADES;

SILICON CARBIDE;

EID: 0035364529 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00415-3 Document Type: Conference Paper

Times cited : (59)

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