Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays

Optics Express

Volumn 19, Issue 104, 2011, Pages A900-A907

  Chen, Liang Yi ^a   Huang, Hung Hsun ^a   Chang, Chun Hsiang ^a   Huang, Ying Yuan ^a   Wu, Yuh Renn ^a,b   Huang, JianJang ^a,b  

^a Graduate Institute of Photonics and Optoelectronics   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARACTERIZATION; GALLIUM NITRIDE; LIGHT EMISSION; NANORODS; OPTICAL TRANSITIONS; PASSIVATION; SEMICONDUCTOR DIODES;

ENERGY BAND STRUCTURE; GAN NANORODS; INGAN/GAN QUANTUM WELL; LED ARRAYS; LIGHT EMISSION PROPERTIES; LIGHT EMITTING DIODE ARRAYS; LIGHT EMITTING LAYERS; OPTICAL TRANSITION ENERGIES; PASSIVATION MATERIALS; PIEZOELECTRIC POLARIZATION FIELDS; RAMAN MEASUREMENTS; STRAIN-INDUCED DEFORMATION;

LIGHT EMITTING DIODES;

EID: 79959879843     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.00A900     Document Type: Article

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