Efficiency enhancement and beam shaping of GaN-InGaN vertical-injection light-emitting diodes via high-aspect-ratio nanorod arrays

IEEE Photonics Technology Letters

Volumn 21, Issue 4, 2009, Pages 257-259

  Tsai, Min An ^a   Yu, Peichen ^a   Chao, C L ^a   Chiu, C H ^a   Kuo, H C ^a   Lin, S H ^a   Huang, J J ^b   Lu, T C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Beam shaping; GaN; High aspect ratio nanorod arrays; Vertical injection light emitting diodes (VI LEDs)

Indexed keywords

BEAM-SHAPING; COLLIMATED BEAMS; EFFICIENCY ENHANCEMENT; EMITTED LIGHT; FAR-FIELD; HIGH ASPECT RATIO; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; LIGHT EXTRACTION; LIGHT OUTPUT POWER; NANOROD ARRAYS; OUTPUT BEAM; SELF-ASSEMBLED SILICA; SURFACE NORMAL DIRECTIONS; WAVE-GUIDING;

ASPECT RATIO; DIODES; ELECTROMAGNETIC INDUCTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; NANORODS; REACTIVE ION ETCHING; SILICA;

LIGHT EMITTING DIODES;

EID: 75749127659     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2010556     Document Type: Article

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