Selective-area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy

Applied Physics Letters

Volumn 48, Issue 2, 1986, Pages 142-144

  Hong, J M ^a   Wang, S ^a   Sands, T ^a   Washburn, J ^a   Flood, J D ^b   Merz, J L ^b   Low, T ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; INTEGRATED CIRCUITS - COATINGS; MOLECULAR BEAM EPITAXY; OPTICAL COATINGS - ELECTRONIC PROPERTIES; OPTOELECTRONIC DEVICES - MATERIALS;

EXCITONS; GALLIUM ARSENIDES; OPTOELECTRONIC INTEGRATED CIRCUITS; SILICON DIOXIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022579540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.96977     Document Type: Article

References (0)