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Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Improvement of the low-frequency sensitivity of MgO-based magnetic tunnel junctions by annealing

(4) Duan, H a Tseng, H W a Li, Y a Van Dover, R B a

a Cornell University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ANNEALING PROCESS; LOW FREQUENCY; LOW-FREQUENCY NOISE; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; TUNNELING MAGNETORESISTANCE; TUNNELING PROBABILITIES; ULTRASENSITIVE; VOLTAGE SPECTRAL DENSITY;

ANNEALING; ELECTRIC RESISTANCE; SPECTRAL DENSITY; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 79959416758 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596817 Document Type: Article

Times cited : (8)

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