Low-frequency noise and tunneling magnetoresistance in Fe (110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Guerrero, R ^a   Aliev, F G ^a   Villar, R ^a   Hauch, J ^b   Fraune, M ^b   Guntherodt G ^b   Rott, K ^c   Bruckl H ^c   Reiss, G ^c  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c BIELEFELD UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; LOCK-IN AMPLIFIERS; ROOM TEMPERATURE; TWO-STEP AMPLIFIERS;

AMPLIFIERS (ELECTRONIC); CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; FERROMAGNETISM; SPURIOUS SIGNAL NOISE; THIN FILMS; TUNNEL JUNCTIONS;

MAGNETORESISTANCE;

EID: 23644454657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001128     Document Type: Article

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