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Volumn 106, Issue 3, 2009, Pages

Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions

(6) Mukherjee, Sankha S a Bai, Feiming a,d MacMahon, David b Lee, Chih Ling c,e Gupta, Surendra K a Kurinec, Santosh K a

a ROCHESTER INSTITUTE OF TECHNOLOGY (United States)

b MICRON TECHNOLOGY INC (United States)

c VEECO INSTRUMENTS INC (United States)

d UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

e SAN JOSE RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; B DIFFUSION; DEFECT STATE; EQUAL SIZES; GRAIN GROWTH BEHAVIOR; IN-PLANE; MAGNETIC TUNNEL JUNCTION; OUT-OF-PLANE DIRECTION; PARALLEL ELECTRON ENERGY LOSS SPECTROSCOPIES; PHYSICAL PROCESS; X- RAY DIFFRACTION;

COBALT COMPOUNDS; CRYSTALLIZATION; DIFFUSION IN SOLIDS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; FILM GROWTH; GRAIN SIZE AND SHAPE; SEMICONDUCTOR JUNCTIONS; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

GRAIN GROWTH;

EID: 69149085471 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3176501 Document Type: Article

Times cited : (30)

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