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Volumn 23, Issue 12, 2011, Pages 3120-3128

Thallium chalcogenide-based wide-band-gap semiconductors: TlGaSe 2 for radiation detectors

Author keywords

chalcogenide; crystal growth; gamma ray detector; photoconductivity; radiation detector; semiconductor; TlGaSe2

Indexed keywords

ABSORPTION MEASUREMENTS; CLEAVED SURFACES; COMMERCIAL MATERIALS; CORNER-SHARING TETRAHEDRA; ELECTRONIC BAND STRUCTURE CALCULATION; ELECTRONS AND HOLES; FULL POTENTIAL LINEARIZED AUGMENTED PLANE WAVE METHOD; GALLIUM SELENIDES; GAMMA-RAY DETECTOR; HOLE EFFECTIVE MASS; LAYERED CRYSTAL STRUCTURE; MATERIAL SYSTEMS; MODIFIED BRIDGMAN METHOD; SEMICONDUCTOR; SIGNAL RESPONSE; SINGLE CRYSTAL X-RAY DIFFRACTION; SPACE GROUPS; SPIN-ORBIT COUPLINGS; TLGASE2; WIDE-BAND-GAP SEMICONDUCTOR;

EID: 79959387922     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm200946y     Document Type: Article
Times cited : (90)

References (60)
  • 34
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    • Cambridge University Press: Cambridge, U.K.
    • Smith, R. A. Semiconductors; Cambridge University Press: Cambridge, U.K., 1959.
    • (1959) Semiconductors
    • Smith, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.