Annealing Behavior of Layered Semiconductor p-GaSe Single Crystal

Physica Status Solidi (A) Applied Research

Volumn 185, Issue 2, 2001, Pages 341-348

  Shigetomi, S ^a   Ikari, T ^b   Nishimura, N ^c  

^a KURUME UNIVERSITY   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

^c FUKUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005585003     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200106)185:2<341::AID-PSSA341>3.0.CO;2-0     Document Type: Article

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