Characterization of Cd1-xZnxTe crystals grown from a modified vertical bridgman technique

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1267-1274

  Cui, Y ^a   Groza, M ^a   Wright, G W ^a   Roy, U N ^a   Burger, A ^a   Li, L ^b   Lu, F ^b   Black, M A ^b   James, R B ^c  

^a FISK UNIVERSITY   (United States)

^b Yinnel Tech Inc   (United States)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

CZT; DC photoconductivity; Photoluminescence; Pockels effect; Radiation detector

Indexed keywords

CRYSTAL GROWTH; ELECTRIC FIELD EFFECTS; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RADIATION DETECTORS; SEMICONDUCTING TELLURIUM; THERMAL EFFECTS;

CZT; DC PHOTOCONDUCTIVITY; ELECTRIC FIELD DISTRIBUTION; VERTICAL BRIDGMAN TECHNIQUE;

CADMIUM;

EID: 33746216391     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0253-3     Document Type: Conference Paper

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