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Volumn 47, Issue 41, 2008, Pages 7828-7832

Soluble direct-band-gap semiconductors LiAsS2 and NaAsS 2: Large electronic structure effects from weak As⋯S interactions and strong nonlinear optical response

Author keywords

Chalcogenides; Electronic structure; Nonlinear optics; Semiconductors; Thioarsenates

Indexed keywords


EID: 54749138352     PISSN: 14337851     EISSN: None     Source Type: Journal    
DOI: 10.1002/anie.200801392     Document Type: Article
Times cited : (175)

References (52)
  • 4
    • 9244241533 scopus 로고
    • see Supporting Information
    • d) S. Fossier, et al., J. Opt. Soc. Am. B 2004, 21, 1981 (see Supporting Information).
    • (1981) J. Opt. Soc. Am. B , vol.21
    • Fossier, S.1
  • 30
    • 54749132763 scopus 로고    scopus 로고
    • See the Supporting Information
    • See the Supporting Information.
  • 31
    • 54749105539 scopus 로고    scopus 로고
    • w = 4.33 for I > 2σ(I).
    • w = 4.33 for I > 2σ(I).
  • 33
    • 54749084755 scopus 로고    scopus 로고
    • Crystal data for Li1-xNaxAsS 2(x, 0.4, Ia, Monoclinic space group Cc, Z, 4; a, 12.104(3, b, 5.4839(9, c, 5.4176(14) Å, β, 113.188(19)°, V, 330.54(13) Å3 at 100 K; θmax (MoKa, 29.03°; number of data measured: 1487; number of unique data Fo2 > 2σ(Fo2, 827; number of variables: 38; μ, 11.293 mm-1; ρcalcd, 3.062 g cm-3; Rint, 2.86, GOF, 1.088; R1, 2.36, Rw, 5.62% for I > 2σ(I, Crystal data for Li1-xNaxAsS2(x, 0.5, IIa, Orthorhombic Pbca, Z, 8; a, 11.0913(6, b, 5.4291(2, c, 22.5383(12) Aring;, V, 1357.16(11) Å3
    • 2, respectively.
  • 44
    • 34047111236 scopus 로고    scopus 로고
    • 3 is also known to be a key factor for band edge properties: a E. Tarnow, A. Antonelli, J. D. Joannopoulos, Phys. Rev. 1986, 34, 4059.
    • 3 is also known to be a key factor for band edge properties: a) E. Tarnow, A. Antonelli, J. D. Joannopoulos, Phys. Rev. 1986, 34, 4059.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.