Properties of layered crystals for radiation detectors: TlGaSe2 system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7449, Issue , 2009, Pages

  Knuteson, D J ^a   Singh, N B ^a   Kahler, D ^a   Wagner, B ^a   Berghmans, A ^a   McLaughlin, S ^a   Schwartz, K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CHARACTERISTICS; ELECTRONIC CHARACTERISTICS; HIGH PURITY MATERIALS; LAYERED CRYSTALS; MICROSTRUCTURAL PROPERTIES; NO DONOR; OPTICAL TRANSMISSIONS; ROOM TEMPERATURE; TERNARY COMPOUNDS;

ALLOYING; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; GRAIN BOUNDARIES; LIGHT TRANSMISSION; MELTING POINT; NEUTRON DETECTORS; PHASE DIAGRAMS; PHASE TRANSITIONS; RADIATION DETECTORS; THERMOANALYSIS;

GAMMA RAYS;

EID: 71449120075     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.828472     Document Type: Conference Paper

References (8)

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2. Singh, N. B., Narayanan, R., Zhao, A. X., Balakrishna, V., Hopkins, R. H., Suhre, D. R., Fernelius, N. C., Hopkins, F. K. and Zelmon, D. E., "Bridgman growth of GaSe crystals for nonlinear optical applications," Mater. Sci. & Eng. B, 49, 243-246 (1997).
3. Suhre, D. R., Singh, N. B., Balakrishna, V., Fernelius, N. C. and Hopkins, F. K., "Improved crystal quality and harmonic generation in GaSe doped with indium," Optics Letters, 22, 775-777 (1997).
4. Fernelius, N. C., Singh, N. B., Suhre, D. R. and Balakrishna, V., "Modified GaSe for High Power NLO Applications", US Patent 5980789 (1999
5. Hahn, H. and Wellmann, B., "On Ternary Chalcogenides Of Thallium, With Gallium And Indium," Naturwissenschaften 54, 42 (1967).
6. Issacs, T. J. and Hopkins, R. H., J. Crystal Growth 29, 121 (1975).
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