Space-charge-limited currents and photoconductive properties of Tl 2InGaSe4 layered crystals

Philosophical Magazine

Volumn 88, Issue 22, 2008, Pages 2899-2906

  Qasrawi, A F ^a,b   Gasanly, N M ^c  

^a ATILIM UNIVERSITY   (Turkey)

^b ARAB AMERICAN UNIVERSITY   (Palestine)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Electrical properties; Electronic transport; Layered crystals; Photoelectrical properties

Indexed keywords

CONCENTRATION OF; CONDUCTION BAND EDGES; DARK CONDUCTIVITIES; ELECTRICAL PROPERTIES; ELECTRONIC PARAMETERS; ELECTRONIC TRANSPORT; ENERGY LEVELS; INCIDENT LIGHT INTENSITIES; LAYERED CRYSTALS; PHOTOCONDUCTIVE PROPERTIES; PHOTOELECTRICAL PROPERTIES; RECOMBINATION CENTRES; RECOMBINATION MECHANISMS; ROOM TEMPERATURES; SPACE-CHARGE LIMITED CURRENTS; TEMPERATURE DECREASE; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; TRAPPING ENERGIES;

CARRIER TRANSPORT; CRYSTALS; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; PHOTOCONDUCTIVITY;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65249083421     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430802382267     Document Type: Article

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